On the Origin of the Large Remanent Polarization in La:HfO 2-Reference-Cited by-同舟云学术

On the Origin of the Large Remanent Polarization in La:HfO 2

Published:2019-09-19 Issue:12 Volume:5 Page:1900303
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Schenk Tony¹²^ORCID,Fancher Chris M.³^ORCID,Park Min Hyuk¹⁴^ORCID,Richter Claudia¹,Künneth Christopher⁵^ORCID,Kersch Alfred⁵,Jones Jacob L.⁶,Mikolajick Thomas¹⁷^ORCID,Schroeder Uwe¹^ORCID

Affiliation:

1. NaMLab gGmbH Noethnitzer Str. 64 D‐01187 Dresden Germany

2. Materials Research and Technology Department Luxembourg Institute of Science and Technology (LIST) 41 Rue du Brill L‐4422 Belvaux Luxembourg

3. Neutron Scattering Science Directorate Oak Ridge National Laboratory Oak Ridge TN 37831 USA

4. School of Materials Science and Engineering Pusan National University 2, Busandaehak‐ro 63beon‐gil, Geumjeong‐gu Busan 46241 Republic of Korea

5. Department of Applied Sciences and Mechatronics Munich University of Applied Sciences Lothstr. 34 D‐80335 Munich Germany

6. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695 USA

7. Institute of Semiconductors and Microsystems TU Dresden D‐01062 Dresden Germany

Funder

Alexander von Humboldt-Stiftung

Fonds National de la Recherche Luxembourg

Oak Ridge National Laboratory

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900303

Reference72 articles.

1. An extensive study of the influence of dopants on the ferroelectric properties of HfO2

2. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

3. Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition

4. Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration

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