Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO<sub>2</sub>-Reference-Cited by-同舟云学术

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Published:2024-06-14 Issue:25 Volume:16 Page:32533-32542
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Bohan¹^ORCID,Ganser Richard²,Holsgrove Kristina M.³^ORCID,Wang Xuetao¹^ORCID,Vishnumurthy Pramoda¹,Mikolajick Thomas¹⁴^ORCID,Schroeder Uwe¹^ORCID,Kersch Alfred²^ORCID,Lomenzo Patrick D.¹^ORCID

Affiliation:

1. NaMLab gGmbH, 01187 Dresden ,Germany

2. Department of Applied Sciences and Mechatronics, Munich University of Applied Science, 80335 Munich, Germany

3. School of Mathematics and Physics, Queen’s University Belfast, Belfast ,Northern Ireland BT7 1NN, U.K.

4. Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany

Funder

Samsung

Deutsche Forschungsgemeinschaft

Freistaat Sachsen

Queen's University Belfast

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c06143

Reference69 articles.

1. Applications of Modern Ferroelectrics

2. Ferroelectric Memories

3. Emerging memories: resistive switching mechanisms and current status

4. Depolarization fields in thin ferroelectric films

5. Thermodynamic stability of thin ferroelectric films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors;ACS Applied Electronic Materials;2024-08-15