Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors-Reference-Cited by-同舟云学术

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Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors

Published:2024-08-15 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Vishnumurthy Pramoda¹^ORCID,Xu Bohan¹^ORCID,Wunderwald Florian¹,Richter Claudia¹,Rehm Oliver²,Baumgarten Lutz³^ORCID,Müller Martina²,Mikolajick Thomas¹⁴^ORCID,Kersch Alfred⁵^ORCID,Schroeder Uwe¹^ORCID

Affiliation:

1. NaMLab gGmbH, Noethnitzer Strasse 64a, 01187 Dresden, Germany

2. Universität Konstanz Fachbereich Physik, 78457 Konstanz, Germany

3. Forschungszentrum Jülich GmbH Peter Grünberg Institut (PGI-6), 52425 Jülich, Germany

4. Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany

5. Munich University of Applied Sciences, Loth Str. 34, 80335 Munich, Germany

Funder

Samsung

Universit?t Konstanz

Deutsche Forschungsgemeinschaft

Vector Stiftung

Saxony State

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01025

Reference67 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. Ferroelectricity in undoped hafnium oxide

4. Theory of Antiferroelectric Crystals

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