Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition-Reference-Cited by-同舟云学术

Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition

Published:2017-09-25 Issue:13 Volume:111 Page:132903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kozodaev M. G.¹,Chernikova A. G.¹,Korostylev E. V.¹,Park M. H.²,Schroeder U.²^ORCID,Hwang C. S.³,Markeev A. M.¹

Affiliation:

1. Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow region, Russia

2. NaMLab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany

3. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea

Funder

Alexander von Humboldt-Stiftung (Humboldt Foundation)

Russian Science Foundation (RSF)

Ministry of Education and Science of the Russian Federation (Minobrnauka)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4999291

Reference32 articles.

1. Ferroelectricity in hafnium oxide thin films

2. FeRAM technology for high density applications

3. Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

4. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5 Zr0.5 O2 -based ferroelectric MIM structures

5. Enhancement in Ferroelectric Properties of Pb(Zr[sub 0.4]Ti[sub 0.6])O[sub 3] Thin-Film Capacitors with PtO[sub x] Electrodes

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