Affiliation:
1. JSC Molecular Electronics Research Institute Akademika Valieva Street, 6/1 Zelenograd 124460 Moscow Russia
2. Moscow Institute of Physics and Technology (National Research University) Institutskiy per. 9 Dolgoprudny 141700 Moscow region Russia
Abstract
Structural, mechanical, and electrophysical properties of rhombohedral hafnium oxide (r‐HfO2) with space group R3, as well as properties of HfO2, ZrO2, and Hf0.5Zr0.5O2 with space group Pca21 are studied using quantum chemical calculations. The characteristic diffraction peak of 2θ r‐HfO2 is close to the characteristic diffraction peaks of tetragonal (t‐HfO2) and orthorhombic (f‐HfO2) hafnium oxide. The value of bulk modulus is 231 GPa, which is larger than one of the orthorhombic structures. The values of high intensity peaks of Raman spectrum are 670 and 540 cm−1. The bandgap width is 5.8 eV and the average value of dielectric constant is 35.34, which is higher than one of orthorhombic hafnium oxide.