Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Author:
Affiliation:
1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6064, United States
Funder
Ministerio de Econom?a y Competitividad
Generalitat de Catalunya
European Social Fund
China Scholarship Council
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00256
Reference40 articles.
1. Ferroelectricity in hafnium oxide thin films
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3. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
4. Review and perspective on ferroelectric HfO2-based thin films for memory applications
5. Stabilizing the ferroelectric phase in doped hafnium oxide
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