Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks-Reference-Cited by-同舟云学术

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Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Published:2017-08 Issue:8 Volume:33 Page:901-906
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Gao Juan,He Gang,Xiao Dongqi,Jin Peng,Jiang Shanshan,Li Wendong,Liang Shuang,Zhu Li

Funder

National Natural Science Foundation of China

Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China

Anhui Provincial Natural Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Polymers and Plastics,Mechanical Engineering,Mechanics of Materials,Ceramics and Composites

Reference39 articles.

1. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

2. Advanced Gate Stacks for High-Mobility Semiconductors,2007

3. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

4. Formation of Ge0 and GeO nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

5. Hafnium oxide gate dielectrics on sulfur-passivated germanium

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1. Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors;Rare Metals;2024-07-09

2. Preparation and performance optimization of HfAlO hybrid gate dielectric thin films driven by solution;Journal of Sol-Gel Science and Technology;2024-07-07

3. Atomic layer deposition of Y2O3 as high-k dielectrics by using a heteroleptic yttrium precursor and water;Journal of Alloys and Compounds;2024-07

4. Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures;Ceramics International;2024-07

5. Tunable EOT Scaling Down to 0.55 nm for HfO₂-Based Gate-Stacks on Ge Substrate by In Situ H₂ Plasma Treatment;ECS Journal of Solid State Science and Technology;2024-05-01

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