Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors-Reference-Cited by-同舟云学术

Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors

Published:2024-07-09 Issue: Volume: Page:
ISSN:1001-0521
Container-title:Rare Metals
language:en
Short-container-title:Rare Met.

Author:

Sang Guan-Qiao^ORCID,Jiang Ren-Jie,Wei Yan-Zhao^ORCID,Li Qing-Kun^ORCID,Zhang Mei-He,Yao Jia-Xin^ORCID,Lu Yi-Hong,Cao Lei^ORCID,Li Jun-Feng,Qin Xu-Lei^ORCID,Zhang Qing-Zhu^ORCID,Yin Hua-Xiang^ORCID

Funder

National Natural Science Foundation of China

Strategic Pilot Project of the Chinese Academy of Sciences-Class A

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s12598-024-02863-x.pdf

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