Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer-Reference-Cited by-同舟云学术

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

Published:2014-12-15 Issue:24 Volume:6 Page:22013-22025
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

He Gang¹²,Gao Juan¹,Chen Hanshuang¹,Cui Jingbiao³,Sun Zhaoqi¹,Chen Xiaoshuang²

Affiliation:

1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, P.R. China

2. National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, P.R. China

3. Department of Physics, The University of Memphis, 216 Manning Hall, Memphis, Tennessee 38152-3390, United States

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

Anhui University

Ministry of Science and Technology of the People's Republic of China

Youth Science Research Foundation, Anhui University

Natural Science Foundation of Anhui Higher Education Institution of China

Outstanding Young Scientific Foundation, Anhui University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am506351u

Reference64 articles.

1. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

2. Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics

3. Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

4. Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition

5. Energy-band alignments of HfO2 on p-GaAs substrates

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