Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2001757
Reference15 articles.
1. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
2. A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation
3. Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge
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