Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations
Author:
Affiliation:
1. Xidian University,School of Microelectronics,Xi’an,China
2. Zhejiang Lab,Research Center for Intelligent Chips and Devices,Hangzhou,China
Funder
Research and Development
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9933043/9933065/09933130.pdf?arnumber=9933130
Reference12 articles.
1. Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks;franco;IEEE International Electron Devices Meeting,2013
2. BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
3. Positive bias temperature instability effects in advanced high-k/metal gate NMOSFETs;ioannou;Proc IEEE Int Integr Rel Workshop Final Rep,2008
4. Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation
5. Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3 IL;joishi;2017 IEEE International Reliability Physics Symposium (IRPS),2017
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