BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs-Reference-Cited by-同舟云学术

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BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Published:2014-10 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)
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Author:

Franco J.,Kaczer B.,Roussel J.,Cho M.,Grasser T.,Mitard J.,Arimura H.,Witters L.,Cott D.,Waldron N.,Zhou D.,Vais A.,Lin D.,Alian A.,Pourghaderi M. A.,Martens K.,Sioncke S.,Collaert N.,Thean A.,Heyns M.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7041331/7049485/07049510.pdf?arnumber=7049510

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO₂-based Ge nMOSFETs with Interlayer Passivations;2022 International Conference on IC Design and Technology (ICICDT);2022-09-21

2. Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability;Microelectronics Reliability;2020-12

3. A pollen-climate calibration from western Patagonia for palaeoclimatic reconstructions;Journal of Quaternary Science;2019-01

4. Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks;Journal of Applied Physics;2018-04-07

5. A Fast Distributed Data-Assimilation Algorithm for Divergence-Free Advection;SIAM Journal on Scientific Computing;2018-01

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