Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3581891
Reference21 articles.
1. p-channel germanium MOSFETs with high channel mobility
2. Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics
3. Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
4. Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge
5. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
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1. Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer;RSC Advances;2019
2. Improved interfacial properties of GaAs MOS capacitor with NH3-plasma-treated ZnON as interfacial passivation layer;Journal of Semiconductors;2017-09
3. High-k Dielectric for Nanoscale MOS Devices;Outlook and Challenges of Nano Devices, Sensors, and MEMS;2017
4. Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate;IEEE Transactions on Electron Devices;2016-12
5. Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric;Applied Physics Letters;2015-03-23
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