Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er2O3/InP Heterointerface
Author:
Affiliation:
1. School of Materials Science and Engineering, Anhui University, Hefei, China
2. School of Integration Circuits, Anhui University, Hefei, China
3. School of Mathematical Information, Shaoxing University, Shaoxing, China
Funder
National Natural Science Foundation of China
Anhui Project
Zhejiang Engineering Research Center of MEMS, Shaoxing University, through the Open Fund Project
Key Natural Science Research Projects in Colleges and Universities in Anhui Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10328902/10299541.pdf?arnumber=10299541
Reference40 articles.
1. Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors
2. Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress;risti?;J Non-Crystalline Solids,2006
3. Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor
4. Irradiation response of radio-frequency sputtered Al/Gd 2 O 3 /p-Si MOS capacitors
5. Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates
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