Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor-Reference-Cited by-同舟云学术

Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor

Published:2018-08-13 Issue:20 Volume:29 Page:17473-17482
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Kahraman Aysegul^ORCID,Gurer Umutcan,Lok Ramazan,Kaya Senol,Yilmaz Ercan

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10854-018-9847-9/fulltext.html

Reference49 articles.

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5. Y.C. Quan, J.E. Lee, H. Kang, Y. Roh, D. Jung, C.-W. Yang, Jpn. J. Appl. Phys. 41, 6904 (2002)

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