Improvement of InP crystal quality grown on GaAs substrates and device applications-Reference-Cited by-同舟云学术

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Improvement of InP crystal quality grown on GaAs substrates and device applications

Published:1991-01 Issue:1-4 Volume:107 Page:827-831
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kimura Tatsuya,Kimura Tadashi,Ishimura Eitaro,Uesugi Fumito,Tsugami Mari,Mizuguchi Kazuo,Murotani Toshio

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor deposition

2. Proc. 16th Intern. Symp. on GaAs and Related Compounds;Kimura,1990

3. Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy

4. Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing

5. Révélation métallographique des défauts cristallins dans InP

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1. Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition;Coatings;2022-05-24

2. Numerical analysis of the output waveguide design for 1.55 μm square microcavity lasers directly grown on GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-07

3. Metamorphic growth of 1.55 \mu m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates;Chinese Optics Letters;2015

4. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires;Journal of Applied Physics;2014-12-07

5. Interfacial Misfit Dislocation Arrays;Lattice Engineering;2012-11-27

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