Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339321
Reference13 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
3. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
4. Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition
5. MOVPE InGaAs/InP grown directly on GaAs substrates
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