Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires-Reference-Cited by-同舟云学术

Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

Published:2014-12-07 Issue:21 Volume:116 Page:214304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yan Xin¹,Zhang Xia¹,Li Junshuai¹,Cui Jiangong¹,Ren Xiaomin¹

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funder

111 Program of China

National Basic Research Program of China

Natural Science Foudation of Beijing

Specialized Research Fund for the Doctoral Program of Higher Education

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903321

Reference36 articles.

1. Programmable nanowire circuits for nanoprocessors

2. Optically pumped room-temperature GaAs nanowire lasers

3. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

4. An invisible metal–semiconductor photodetector

5. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

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