Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing-Reference-Cited by-同舟云学术

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Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing

Published:1989-10-20 Issue:Part 2, No. 10 Volume:28 Page:L1721-L1724
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayafuji Norio,Kimura Tatsuya,Yoshida Naohito,Kaneno Nobuaki,Tsugami Mari,Mizuguchi Kazuo,Murotani Toshio,Ibuki Sumiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate;Bulletin of the Russian Academy of Sciences: Physics;2023-06

2. Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition;Coatings;2022-05-24

3. Thermal stress distribution in a laser array structure selectively grown on V-groove-patterned silicon;AIP Advances;2018-08

4. Numerical analysis of the output waveguide design for 1.55 μm square microcavity lasers directly grown on GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-07

5. Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal–Organic Chemical Vapor Deposition;Journal of Electronic Materials;2018-06-26

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