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Numerical analysis of the output waveguide design for 1.55 μm square microcavity lasers directly grown on GaAs substrates

  • Published:2018-07 Issue: Volume:101 Page:157-161
  • ISSN:1386-9477
  • Container-title:Physica E: Low-dimensional Systems and Nanostructures
  • language:en
  • Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ma Xing,Wang JunORCID,Cheng Zhuo,Yang Zeyuan,Hu Haiyang,Wang Wei,Yin Haiying,Huang Yongqing,Ren Xiaomin

Funder

Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications)

National Natural Science Foundation of China

International Science & Technology Cooperation Program of China

Doctoral Program of Higher Specialized Research Fund

111Project of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Compositionally-graded InGaAs-InGaP alloys for metamorphic InP on GaAs;Yang;J. Cryst. Growth,2011

2. Direct growth of high-quality InP layers on GaAs substrates by MOCVD;Yarn;Act. Passive Electron. Components,2003

3. The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes;Jang;IEEE Photon. Technol. Lett.,2001

4. Selective etching of GaAs/Si and InP/GaAs heteroepitaxial wafer;Xiong;Proc. SPIE,2013

5. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy;Zheng;Appl. Phys. Lett.,2000

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