Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1306657
Reference8 articles.
1. Submicron transferred-substrate heterojunction bipolar transistors
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4. Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's
5. Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors
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