Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors

Published:1996-05 Issue:5 Volume:43 Page:784-792
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kirtania A.K.,Das M.B.,Chandrasekhar S.,Lunardi L.M.,Qua G.J.,Hamm R.A.,Li-Wu Yang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/10544/00491256.pdf?arnumber=491256

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation;Microelectronics Reliability;2008-03

2. Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors;Solid-State Electronics;2005-08

3. Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors;Microelectronics Reliability;2004-09

4. Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors;IEE Proceedings - Circuits, Devices and Systems;2004

5. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review;SPIE Proceedings;2003-05-12

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