Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review
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SPIE
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10
2. Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications;Microelectronics Reliability;2014-09
3. Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors;Journal of Applied Physics;2008-06
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5. 1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI;SPIE Proceedings;2007-06-07
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