Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray
Author:
Affiliation:
1. IES, University of Montpellier, CNRS,Montpellier,France
2. STMicroelectronics,Crolles Cedex,France,38926
Funder
University of Montpellier
European Regional Development Fund
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9857595/9857677/09857722.pdf?arnumber=9857722
Reference16 articles.
1. Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
2. Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis
3. Mixed-Mode Stress in Silicon–Germanium Heterostructure Bipolar Transistors: Insights From Experiments and Simulations
4. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review
5. Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors
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