Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors

Published:2014-09 Issue: Volume: Page:
ISSN:
Container-title:2014 44th European Solid State Device Research Conference (ESSDERC)
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Author:

Seif M.,Pascal F.,Sagnes B.,Hoffmann A.,Haendler S.,Chevalier P.,Gloria D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6926646/6948742/06948838.pdf?arnumber=6948838

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09

2. Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

3. Low-frequency noise in downscaled silicon transistors: Trends, theory and practice;Physics Reports;2022-12

4. Broadband Modeling, Analysis, and Characterization of SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Microwave Theory and Techniques;2022-02

5. Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10

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