Metamorphic growth of 1.55 \mu m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates-Reference-Cited by-同舟云学术

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Metamorphic growth of 1.55 \mu m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

Published:2015 Issue:3 Volume:13 Page:031401-31405
ISSN:1671-7694
Container-title:Chinese Optics Letters
language:en
Short-container-title:中国光学快报

Author:

Xiaobo Li Xiaobo Li,Yongqing Huang Yongqing Huang,Jun Wang Jun Wang,Xiaofeng Duan Xiaofeng Duan,Ruikang Zhang Ruikang Zhang,Yehong Li Yehong Li,Zheng Liu Zheng Liu,Qi Wang Qi Wang,Xia Zhang Xia Zhang,Xiaomin Ren Xiaomin Ren

Publisher

Shanghai Institute of Optics and Fine Mechanics

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs;Journal of Materials Science;2023-06

2. Luminescence mechanism of InGaAs self-fit well-cluster composite structure with super-wide spectra;Journal of Luminescence;2023-01

3. The External Electric and Magnetic Fields Effect on Binding Energy of Hydrogenic Donor Impurity in a InGaAsP/InP Core–Shell Quantum Dot;Journal of Nanoelectronics and Optoelectronics;2019-07-01

4. Numerical analysis of the output waveguide design for 1.55 μm square microcavity lasers directly grown on GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-07

5. Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure;Chinese Optics Letters;2018

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