Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100832
Reference11 articles.
1. Vapor phase epitaxial growth and characterization of InP on GaAs
2. GaAs MESFET's fabricated on InP substrates
3. Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate
4. Determination of the conduction‐band discontinuity between In0.53Ga0.47As/In0.52Al0.48As usingn+‐InGaAs/InAlAs/n−‐InGaAs capacitors
5. Optical properties of molecular beam epitaxially grown GaAs1−xSbx(0
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen-induced states near the GaAs band edges;Physical Review B;1999-02-15
2. Growth of GaAsInP heteromaterials and corresponding strain determination;Materials Science and Engineering: B;1995-12
3. Heteroepitaxial GaAs layers on InP substrates: Radiative recombinations, strain relaxation, structural properties, and comparison with InP layers on GaAs;Journal of Applied Physics;1992-05
4. Photoluminescence studies of hydrogen passivation of GaAs grown on InP substrates by molecular‐beam epitaxy;Journal of Applied Physics;1991-03
5. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs;Journal of Crystal Growth;1991-01
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