Photoluminescence studies of hydrogen passivation of GaAs grown on InP substrates by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348533
Reference20 articles.
1. Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate
2. GaAs MESFET's fabricated on InP substrates
3. High-performance GaAs MESFETs fabricated on misoriented
4. Performance of GaAs MESFET's on InP substrates
5. Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy
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1. Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation;Journal of Applied Physics;2013-11-14
2. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
3. Hydrogen-induced states near the GaAs band edges;Physical Review B;1999-02-15
4. Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices;Solid-State Electronics;1997-03
5. Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP‐coated GaAs substrates;Journal of Applied Physics;1995-02
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