Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99878
Reference10 articles.
1. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
2. GaAs MESFET's fabricated on monolithic GaAs/Si substrates
3. A low-power high-speed ion-implanted JFET for InP-based monolithic optoelectronic IC's
4. Monolithic optoelectronic integration: A new component technology for lightwave communications
5. Vapor phase epitaxial growth and characterization of InP on GaAs
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of hydrogenation on deep‐level traps in InP on GaAs;Journal of Applied Physics;1992-01
2. Photoluminescence studies of hydrogen passivation of GaAs grown on InP substrates by molecular‐beam epitaxy;Journal of Applied Physics;1991-03
3. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs;Journal of Crystal Growth;1991-01
4. Relaxed lattice-mismatched growth of III–V semiconductors;Progress in Crystal Growth and Characterization of Materials;1991-01
5. Photoluminescence and Raman studies of residual stresses in GaAs directly grown on InP;Applied Physics Letters;1989-10-09
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