Effect of hydrogenation on deep‐level traps in InP on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350687
Reference19 articles.
1. Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate
2. GaAs MESFET's fabricated on InP substrates
3. High-performance GaAs MESFETs fabricated on misoriented
4. Performance of GaAs MESFET's on InP substrates
5. Hydrogenation of GaAs‐on‐InP
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1. nBn dark current reduction by UV hydrogenation;Infrared Physics & Technology;2013-07
2. Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy;Journal of Applied Physics;2008-01
3. Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices;Solid-State Electronics;1997-03
4. Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP‐coated GaAs substrates;Journal of Applied Physics;1995-02
5. InP Exposure to Hydrogen Plasma with DC Potential Control;Journal of The Electrochemical Society;1993-09-01
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