Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2824967
Reference33 articles.
1. Quantum well heterostructures grown by molecular beam epitaxy on silicon-on-gallium arsenide substrates
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3. Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances
4. Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature
5. Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy
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1. Direct growth of lattice mismatched InP on GaAs substrate with AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer;Materials Science in Semiconductor Processing;2024-03
2. Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate;Bulletin of the Russian Academy of Sciences: Physics;2023-06
3. Anisotropic distribution of microstructure in compressively strained InP/GaAs epitaxial layers;Superlattices and Microstructures;2018-10
4. Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal–Organic Chemical Vapor Deposition;Journal of Electronic Materials;2018-06-26
5. High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2016-08-24
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