Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108519
Reference10 articles.
1. Heteroepitaxy of InGaAs on GaAs substrate with InAlAs intermediate layer
2. Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates
3. Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy
4. High‐speed photodetectors on InGaAs/GaAs‐on‐GaAs superlattices
5. Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy
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1. Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy;Journal of Applied Physics;2008-01
2. Electronic electrooptic phase modulation using bent-core liquid crystals;Applied Physics Letters;2005-12-26
3. Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2003-08-15
4. Direct Growth of High-Quality InxGa1-xAs Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2002-03-15
5. A growth method to obtain flat and relaxed In0.2Ga0.8As on GaAs (001) developed through in situ monitoring of surface topography and stress evolution;Journal of Crystal Growth;2001-07
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