Determination of the conduction‐band discontinuity between In0.53Ga0.47As/In0.52Al0.48As usingn+‐InGaAs/InAlAs/n−‐InGaAs capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337262
Reference9 articles.
1. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
2. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
3. Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
4. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
5. Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity
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