Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity-Reference-Cited by-同舟云学术

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Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity

Published:1985-04-15 Issue:8 Volume:57 Page:2880-2885
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Arnold D.,Ketterson A.,Henderson T.,Klem J.,Morkoç H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.335224

Reference17 articles.

1. Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

2. Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

3. A GaAs gate heterojunction FET

4. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

5. Measurement of isotype heterojunction barriers byC‐Vprofiling

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3. Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure;ACS Nano;2015-10-12

4. Basic Semiconductor Physics;2010

5. Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1−xAs/GaAs modulation-doped heterostructures;Applied Surface Science;2006-04

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