Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure-Reference-Cited by-同舟云学术

Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure

Published:2015-10-12 Issue:10 Volume:9 Page:10032-10038
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Jeong Hyun¹²,Bang Seungho¹³,Oh Hye Min¹³,Jeong Hyeon Jun¹³,An Sung-Jin¹³,Han Gang Hee¹,Kim Hyun¹³,Kim Ki Kang⁴,Park Jin Cheol¹³,Lee Young Hee¹³,Lerondel Gilles²³,Jeong Mun Seok¹³

Affiliation:

1. Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea

2. Laboratoire de Nanotechnologie et d’Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France

3. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea

4. Department of Energy and Materials Engineering, Dongguk University, Seoul 100-715, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Institute for Basic Science

Fonds Unique Interministériel

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b04233