Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93537
Reference5 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP
3. Electronic Structures of Semiconductor Alloys
4. Some optical properties of the AlxGa1−xAs alloys system
5. Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra
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