Simulation of III-V HEMTs for High-speed Low-power Logic Applications

Abstract

In this paper a program to numerically simulate quantum transport in III-V HEMTs is described. The program uses a Green's function approach for ballistic transport in HEMTs designed for logic applications. The well-confined charge distribution in the quantum well permits an efficient mode space approach that dramatically lowers the computational burden. The program is described, and some results for an 80nm In0.7Ga0.3As HEMTs are presented as an example.