Impact of Effective Mass on the Scaling Behavior of the $f_{T}$ and $f_{\bf max}$ of III–V High-Electron-Mobility Transistors-Reference-Cited by-同舟云学术

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Impact of Effective Mass on the Scaling Behavior of the $f_{T}$ and $f_{\bf max}$ of III–V High-Electron-Mobility Transistors

Published:2012-11 Issue:6 Volume:11 Page:1160-1173
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Ahmed S.,Holland K. D.,Paydavosi N.,Rogers C. M. S.,Alam A. U.,Neophytou N.,Kienle D.,Vaidyanathan M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/6355725/06296717.pdf?arnumber=6296717

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit;Physica E: Low-dimensional Systems and Nanostructures;2021-09

2. Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density;Technical Physics Letters;2018-12

3. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts;Semiconductors;2015-02

4. RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors;IEEE Transactions on Nanotechnology;2013-07

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