RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors-Reference-Cited by-同舟云学术

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RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors

Published:2013-07 Issue:4 Volume:12 Page:566-577
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Holland Kyle D.,Paydavosi Navid,Neophytou Neophytos,Kienle Diego,Vaidyanathan Mani

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/6552856/06509454.pdf?arnumber=6509454

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors;Advanced Materials;2022-11-07

2. A new 2D Si3X(X=S, 0) direct band gap semiconductor with anisotropic carrier mobility;Surface Science;2021-02

3. Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?;Nanoscale Advances;2020

4. Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETs;IEEE Transactions on Electron Devices;2017-12

5. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor;Nanotechnology;2017-11-06

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