Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?-Reference-Cited by-同舟云学术

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

Published:2020 Issue:9 Volume:2 Page:4179-4186
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Feijoo Pedro C.¹²³^ORCID,Pasadas Francisco¹²³^ORCID,Bonmann Marlene⁴⁵⁶^ORCID,Asad Muhammad⁴⁵⁶^ORCID,Yang Xinxin⁴⁵⁶^ORCID,Generalov Andrey⁷⁸⁹^ORCID,Vorobiev Andrei⁴⁵⁶^ORCID,Banszerus Luca¹⁰¹¹¹²¹³^ORCID,Stampfer Christoph¹⁰¹¹¹²¹³^ORCID,Otto Martin¹⁴¹⁵¹²¹³^ORCID,Neumaier Daniel¹⁴¹⁵¹²¹³^ORCID,Stake Jan⁴⁵⁶^ORCID,Jiménez David¹²³^ORCID

Affiliation:

1. Universitat Autònoma de Barcelona

2. 08193 Cerdanyola del Vallès

3. Spain

4. Chalmers University of Technology

5. SE-41296 Gothenburg

6. Sweden

7. Aalto University

8. FI-00076 Helsinki

9. Finland

10. 2nd Institute of Physics

11. RWTH Aachen University

12. 52074 Aachen

13. Germany

14. Advanced Microelectronic Center Aachen

15. AMO GmbH

Abstract

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

Funder

Horizon 2020 Framework Programme

Generalitat de Catalunya

Academy of Finland

Ministerio de Ciencia, Innovación y Universidades

Ministerio de Economía y Competitividad

Vetenskapsrådet

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

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