Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94149
Reference9 articles.
1. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
2. Ultimate low-loss single-mode fibre at 1.55 μm
3. On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique
4. The influence of debye length on the C-V measurement of doping profiles
5. Measurement of isotype heterojunction barriers byC‐Vprofiling
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