Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy-Reference-Cited by-同舟云学术

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Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy

Published:2019-03-14 Issue:10 Volume:125 Page:105704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Jinping¹²,Miao Guoqing¹,Zhang Zhiwei¹^ORCID,Li Xiao¹,Song Hang¹,Jiang Hong¹,Chen Yiren¹,Li Zhiming¹

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. Huawei Technologies Co., Ltd., Bantian, Longgang District, Shenzhen 518129, People’s Republic of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079774

Reference33 articles.

1. Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InP

2. PseudomorphicIn0.17Ga0.83As/Al0.32Ga0.68As multiple quantum wells under hydrostatic pressure: Implications for band alignments

3. Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy

4. Ann‐In0.53Ga0.47As/n‐InP rectifier

5. Investigation of InGaAs-InP quantum wells by optical spectroscopy

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1. Modulating the band alignment and current conduction mechanism of ZrO2/In0.2 Ga0.8As gate stack by atomic-layer-deposited ZnO passivation layer;Thin Solid Films;2020-11

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