Ann‐In0.53Ga0.47As/n‐InP rectifier
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329479
Reference13 articles.
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3. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
4. Rectification at n‐GaAs–n‐Ga0.7Al0.3As heterojunctions grown by liquid phase epitaxy
5. Potential distribution and capacitance of abrupt heterojunctions†
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