PseudomorphicIn0.17Ga0.83As/Al0.32Ga0.68As multiple quantum wells under hydrostatic pressure: Implications for band alignments
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.6031/fulltext
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1. Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy;Journal of Applied Physics;2019-03-14
2. Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure;Journal of Electronic Materials;2000-11
3. Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size;Journal of Physics: Condensed Matter;2000-03-15
4. Photoluminescence Studies on Self-Organized InAlAs/AlGaAs Quantum Dots under Pressure;physica status solidi (b);1999-01
5. Chapter 4 Optical Properties of Semiconductors under Pressure;Semiconductors and Semimetals;1998
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