Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100806
Reference10 articles.
1. Continuous 300‐K laser operation of strained superlattices
2. Stimulated emission in strained‐layer quantum‐well heterostructures
3. Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
4. Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)
5. Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
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2. Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers;Applied Physics Letters;2001-05-21
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4. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
5. Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition;IEEE Journal of Quantum Electronics;1994
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