Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371967
Reference17 articles.
1. Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers
2. High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE
3. Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)
4. Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness
5. Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration
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3. Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor;IEEE Transactions on Electron Devices;2006-02
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