Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm-Reference-Cited by-同舟云学术

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Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm

Published:1988 Issue:24 Volume:24 Page:1493
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Stutius W.,Gavrilovic P.,Williams J.E.,Meehan K.,Zarrabi J.H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19881019?crawler=true&mimetype=application/pdf

Reference11 articles.

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-gain diode pumped Yb:YAG amplifier with advanced thermal management for pumping high repetition rate OPCPA;Solid State Lasers XXXIII: Technology and Devices;2024-03-12

2. Metalorganic chemical vapor deposition growth of high-quality and highly uniform strained InGaAs quantum wells in a high-speed rotating-disk reactor;Journal of Crystal Growth;1994-12

3. The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate;IEEE Journal of Quantum Electronics;1994-04

4. Quantum Well Heterostructure Lasers;VLSI Electronics Microstructure Science;1994

5. 980 nm ridge waveguide laser reliability at 100 mW;Applied Physics Letters;1993-04-19

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