Heteroepitaxial GaAs layers on InP substrates: Radiative recombinations, strain relaxation, structural properties, and comparison with InP layers on GaAs-Reference-Cited by-同舟云学术

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Heteroepitaxial GaAs layers on InP substrates: Radiative recombinations, strain relaxation, structural properties, and comparison with InP layers on GaAs

Published:1992-05 Issue:9 Volume:71 Page:4502-4508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Olego D. J.,Okuno Y.,Kawano T.,Tamura M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.351364

Reference16 articles.

1. Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

2. GaAs MESFET's fabricated on InP substrates

3. High performance GaAs MESFETs grown on InP substrates by MOCVD

4. GaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy

5. Heteroepitaxy of GaAs on InP by molecular-beam epitaxy

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1. Two-step growth of metamorphic GaAs/AlGaAs mirror on an InP substrate by MOCVD;Thin Solid Films;2013-09

2. Extended excitons and compact heliumlike biexcitons in type-II quantum dots;Physical Review B;2009-11-18

3. Interfacial Chemistry of InP/GaAs Bonded Pairs;Journal of Electronic Materials;2007-03-30

4. Lateral epitaxial growth of (Ba,Sr)TiO3 thin films;Applied Physics Letters;2003-12-29

5. Lateral Epitaxial Growth of Ba 0.6 Sr 0.4 TiO 3 Thin Films;Integrated Ferroelectrics;2003-06-01

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