Reconstructions and phase transitions of Ge on the Si(111)7 × 7 surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces
2. Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys
3. Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface
4. Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces
5. Stability and surface properties of GeSi alloy films on Si(111) substrate
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1. Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation;Journal of Materials Research;2017-02-08
2. Strain-induced Ge segregation on Si at high temperatures;Journal of Crystal Growth;2015-03
3. Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces;Physical Review B;2012-11-30
4. Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates;Applied Physics Letters;2010-02-15
5. Ge(5×5) as a wetting layer on Si(111);Surface Science;2009-02
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