Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces-Reference-Cited by-同舟云学术

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Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces

Published:2012-11-30 Issue:19 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Stoffel M.,Fagot-Révurat Y.,Tejeda A.,Kierren B.,Nicolaou A.,Le Fèvre P.,Bertran F.,Taleb-Ibrahimi A.,Malterre D.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.195438/fulltext

Reference40 articles.

1. Enhanced electron–phonon coupling at metal surfaces

2. Electron–phonon coupling at surfaces and interfaces

3. Photoemission Study of a Strongly Coupled Electron-Phonon System

4. Electron-phonon coupling in photoemission spectra

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1. Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111);physica status solidi (RRL) – Rapid Research Letters;2024-03-15

2. Giant electron-phonon interaction for a prototypical semiconductor interface: Sn/Ge(111)−(3×3);Physical Review B;2023-01-11

3. First determination of the valence band dispersion of CH3NH3PbI3hybrid organic–inorganic perovskite;Journal of Physics D: Applied Physics;2017-06-07

4. Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer;Nano Letters;2017-03-30

5. Identification of Si and Ge atoms by atomic force microscopy;Physical Review B;2015-10-09

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